The CJW8205BH is a high-performance Dual N-Channel MOSFET designed for low-voltage power management applications. Manufactured using advanced Trench MOS technology, it offers low on-resistance and high efficiency in a compact SOT-23-6 package.
**Key Features:**
– **Part Number:** CJW8205BH
– **Type:** Dual N-Channel MOSFET
– **Drain-Source Voltage (BVDSS):** 16V
– **Gate-Source Voltage (VGS):** ±10V
– **Threshold Voltage (VTH):** 0.3~0.9V
– **Continuous Drain Current (ID):** 5.5A
– **Power Dissipation (PD):** 25W
– **RDS(on):** 28mΩ @ VGS=10V, 37mΩ @ VGS=4.5V, 55mΩ @ VGS=2.5V
– **Input Capacitance (Ciss):** 685pF
– **Output Capacitance (Coss):** 80pF
– **Reverse Transfer Capacitance (Crss):** 75pF
– **Package:** SOT-23-6L
– **Technology:** Trench MOSFET
**Applications:**
– Lithium-ion battery protection circuits
– DC-DC converters
– Load switches and power distribution
– Portable electronic devices
– Low-voltage motor control
**Product Status:** Obsolete – compatible replacements such as 8205A, AO8205, and TP8205 are available.
The CJW8205BH combines low gate charge, fast switching speed, and excellent thermal performance, making it a reliable choice for compact and high-efficiency designs.
